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| (R) ESDA25W QUAL TRANSILTM ARRAY FOR ESD PROTECTION Application Specific Discretes A.S.D.TM MAIN APPLICATIONS Where transient overvoltage protection in ESD sensitive equipment is required, such as : n Computers n Printers n Communication systems n Cellular phones handsets and accessories n Other telephone sets n Set top boxes FEATURES n n n n SOT323-3L 2 unidirectional TRANSILTM functions. Breakdown voltage : VBR = 25V min. Low leakage current : < 1A. Very low PCB space consuming : 4.2 mm2 typically. FUNCTIONAL DIAGRAM DESCRIPTION The ESDA25W is a 2-bit wide monolithic suppressor designed to protect components which are connected to data and transmission lines against ESD. It clamps the voltage just above the logic level supply for positive transients, and to a diode drop below ground for negative transients. 1 3 2 BENEFITS n n n High ESD protection level : up to 25 kV. High integration. Suitable for high density boards. COMPLIES WITH THE FOLLOWING STANDARDS : n n IEC61000-4-2 level 4 MIL STD 883C-Method 3015-6 : class 3. (human body model) March 2000 - Ed: 1A 1/5 ESDA25W ABSOLUTE MAXIMUM RATINGS (Tamb = 25C) Symbol VPP Parameter ESD discharge Test conditions MIL STD 883C - Method 3015-6 IEC61000-4-2, air discharge IEC61000-4-2, contact discharge Value 25 16 9 400 Note 1 - 40 to + 85 150 - 55 to + 150 260 Unit kV PPP Top Tj Tstg TL Peak pulse power (8/20 s) Operating temperature range Junction temperature Storage temperature range Lead solder temperature (10 secondes duration) W C C C C Note 1: The evolution of the operating parameters versus temperature is given trough curves and T parameter ELECTRICAL CHARACTERISTICS (Tamb = 25C) Symbol VRM VBR VCL IRM IPP Parameter Stand-off voltage Breakdown voltage Clamping voltage Leakage current Peak pulse current Voltage temperature coefficient Capacitance per line slope : 1 / R d VCL VBR VRM IRM IR I V T C Rd VF Dynamic resistance Forward voltage drop IPP Types min. VBR @ max. IR IRM max. @ VRM Rd typ. note 2 T max. note 3 10 / C 10 -4 C typ. 0V bias pF 65 VF @ max. IF V V 30 mA 1 A 1 V 24 1.1 V 1.2 mA 10 ESDA25W 25 note 2 : Square pulse Ipp = 15A, tp=2.5s. note 3 : VBR = T* (Tamb -25C) * VBR (25C) 2/5 ESDA25W Fig. 1: Peak pulse power dissipation versus initial junction temperature Ppp[Tj initial]/Ppp[Tj initial=25C] 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 25 50 Tj initial (C) 1000 10000 Fig. 2: Peak pulse power versus exponential pulse duration (Tj initial = 25 C) Ppp(W) tp(s) 100 125 150 100 1 10 100 75 Fig. 3: Clamping voltage versus peak pulse current (Tj initial = 25 C). Rectangular waveform tp = 2.5 s. Ipp(A) 100.0 tp = 2.5s Fig. 4: Capacitance versus reverse applied voltage (typical values). C(pF) 100 F=1MHz Vosc=30mV 10.0 1.0 Vcl(V) 0.1 20 25 30 35 40 45 50 55 60 65 70 75 80 VR(V) 10 1 10 100 Fig. 5: Relative variation of leakage current versus junction temperature (typical values). IR[Tj] / IR[Tj=25C] 1000 Fig. 6: Peak forward voltage drop versus peak forward current (typical values). IFM(A) 1E-4 5E-5 2E-5 Tj = 25C 100 1E-5 5E-6 2E-6 10 1E-6 5E-7 Tj(C) 1 25 50 75 100 125 150 2E-7 1E-7 0.0 0.5 1.0 VFM(V) 1.5 2.0 2.5 3.0 3.5 3/5 ESDA25W ORDER CODE ESDA 25 W ESD ARRAY Package: SOT323-3L VBR min Ordering type ESDA25W Marking E25 Package SOT323-3L Weight 5.4 mg. Base qty 3000 Delivery mode Tape & reel PACKAGE MECHANICAL DATA SOT323-3L DIMENSIONS A REF. A1 D Millimeters Min. Typ. Max. 1.1 0.1 0.4 2.0 1.25 0.65 1.8 0.1 0 2.1 0.2 2.4 0.3 30de g. 2.2 Min. 0.031 0.0 0.010 Inches Typ. Max. 0.043 0.004 0.016 0.010 A A1 b b 0.8 0.0 0.25 0.1 1.8 1.15 c D E 0.26 0.004 0.071 0.079 0.086 0.026 0.071 0.083 0.094 0.004 0.008 0.012 0 30de g. L 1.35 0.045 0.049 0.053 H E e H L c e Mechanical specifications Lead plating Lead plating thickness Lead material Body material Epoxy meets Tin-lead 5m min. 25 m max. Sn / Pb (70% to 90% Sn) Molded epoxy UL94,V0 4/5 ESDA25W Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5 |
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